Solution processed high performance pentacene thin-film transistors.
نویسندگان
چکیده
High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1) with an on/off ratio of 10(6).
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ورودعنوان ژورنال:
- Chemical communications
دوره 48 49 شماره
صفحات -
تاریخ انتشار 2012